GSN680R080MC
描述
650V SiC MOSFETs
Features
⚫Wide Bandgap SiC MOSFET Technology
⚫ Low On-Resistance with High Blocking Voltage
⚫ Low Capacitances with High-Speed Switching
⚫ Low Reverse Recovery (Qrr)
⚫Robust against Parasitic Turn on Even 0V Turn off Gate Voltage
Benefits
⚫Reduced Switching Losses
⚫ Increased System Switching Frequency
⚫ Increased Power Density
⚫ Reduction of Heat Sink Requirements
⚫Reduced EMI
Application
⚫Switch Mode Power Supplies
⚫ High Voltage DC/DC Converters
⚫ Battery Chargers
⚫ Motor Drives
⚫Pulsed Power Applications
特征
● Package=DFN5*6
● Package=DFN5*6
● VRRM(max)=650V
● ID(max)=7A
● PD(max)=47
● VF(max)=22
● RDS(on)18V=880
● RDS(on)15V=1000